Quantum Materials (QMs) exhibit quantum properties on wide length and energy scales, opening doors to unexpected phenomena and applications across diverse fields, including next-generation spintronics (beyond traditional materials like superconductors or graphene). In spintronics, controlling magnetization via spin current, particularly using Spin-Orbit-Torque (SOT), is vital for low-power memory (MRAM) and advanced computing. This research area is known as spinorbitronics. QMs are highly attractive for next-generation SOT devices due to their unique properties and tunability. The proposal focuses on QM/magnetic heterostructures, where SOT magnetization switching is predicted to occur at room temperature using electric currents one order of magnitude smaller than current heavy-metal-based devices. The core objective of the proposal is to study how interface intermixing affects SOT efficiency, which is key to optimizing device performance and energy efficiency.